A comparative study on the NO2 gas sensing properties of ZnO thin films, nanowires and nanorods

被引:81
|
作者
Ozturk, S. [1 ]
Kilinc, N. [1 ]
Tasaltin, N. [1 ]
Ozturk, Z. Z. [1 ,2 ]
机构
[1] Gebze Inst Technol, Dept Phys, TR-41400 Gebze, Turkey
[2] TUBITAK Marmara Res Ctr, Mat Inst, TR-41470 Gebze, Turkey
关键词
ZnO; Thin film; Nanowire; Nanorod; Hydrothermal; Electrodeposition; Sol-gel; NO2; sensing; OXIDE NANOSTRUCTURES; COMPONENT CRYSTALS; SENSOR; FABRICATION; TEMPLATE; ETHANOL; ROLES; SHAPE; SIZE;
D O I
10.1016/j.tsf.2011.04.177
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO thin films were fabricated using the spin coating method, ZnO nanowires by cathodically induced sol-gel deposition by the means of an anodic aluminum oxide (AAO) template, and ZnO nanorods with the hydrothermal technique. For thin film preparation, a clear, homogeneous and stable ZnO solution was prepared by the sol-gel method using zinc acetate (ZnAc) precursor which was then coated on a glass substrate with a spin coater. Vertically aligned ZnO nanowires which were approximately 65 nm in diameter and 10 mu m in length were grown in an AAO template by applying a cathodic voltage in aqueous zinc nitrate solution at room temperature. For fabrication of the ZnO nanorods, the sol-gel ZnO solution was coated on glass substrate by spin coating as a seed layer. Then ZnO nanorods were grown in zinc nitrate and hexamthylenetetramine aqueous solution. The ZnO nanorods are approximately 30 nm in diameter and 500 nm in length. The ZnO thin film, ZnO nanowires and nanorods were characterized by X-ray diffraction (XRD) analysis and scanning electron microscope (SEM). The NO2 gas sensing properties of ZnO thin films, nanowires and nanorods were investigated in a dark chamber at 200 degrees C in the concentration range of 100 ppb-10 ppm. It was found that the response times of both ZnO thin films and ZnO nanorods were approximately 30 s, and the sensor response was depended on shape and size of ZnO nanostructures and electrode configurations. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:932 / 938
页数:7
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