Observation of quantum size and alloying effects of single InGaAs quantum dots on GaAs(001) by scanning tunneling spectroscopy

被引：4
|
作者：
Yamauchi, T [1 ]
Ohyama, Y
Matsuba, Y
Tabuchi, M
Nakamura, A
机构：
[1] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Shibuya Ku, Tokyo 1500002, Japan
[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期
关键词：
D O I：
10.1063/1.1409588
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the morphologies and gap energies of In0.46Ga0.54As quantum dots (QDs) by using scanning tunneling microscopy/spectroscopy. The measured gap energy increases with decreasing dot height in the range of 1.7-6.6 nm. The gap energy has been calculated using a one-dimensional quantum well model taking into account a variation of In composition. Comparison of the observed height dependence and the calculation indicates the one-dimensional quantum confinement of carriers and the In enrichment in a QD. (C) 2001 American Institute of Physics.
引用
收藏
页码：2465 / 2467
页数：3
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