A simple determination method of in-plane Poisson's ratio for MEMS materials by means of on-chip pure bending test

被引:0
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作者
Namazu, Takahiro [1 ]
Tanaka, Mitsuhiro [1 ]
Inoue, Shozo [1 ]
机构
[1] Univ Hyogo, Grad Sch Engn, Dept Mech & Syst Engn, Himeji, Hyogo 6712201, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a novel and simple method for measuring in-plane Poisson's ratio of film materials. We designed on-chip pure-bending test specimen where pure-bending deformation can be produced via torsion bar by application of normal load to loading lever. During pure-bending, the interference pattern of a family of hyperbola, corresponding to the contour tines of a film specimen in the out-of-plane direction, is observed with optical interferometer. In-plane Poisson's ratio of a film specimen can be obtained from only the angle of asymptotes of hyperbola consisting of the interference lines, regardless of other material constants. The measured Poisson's ratio of single crystal silicon (SCS) specimen was 0.063 on average, in close agreement within 2 % deviation from analytical value.
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页码:386 / 389
页数:4
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