Fitting of photoluminescence spectra for structural characterisation of high current density resonant tunnelling diodes for THz applications

被引：2
|
作者：
Cito, Michele [1 ]
Kojima, Osamu [2 ]
Stevens, Benjamin J. [3 ]
Mukai, Toshikazu [4 ]
Hogg, Richard A. [1 ]
机构：
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
[3] IQE Plc, Cardiff CF3 0LW, Wales
[4] ROHM Co Ltd, Ukyo Ku, Kyoto 6158585, Japan
来源：
TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS XIV | 2021年 / 11685卷
关键词：
resonant tunneling diodes; photoluminescence; epitaxy;
D O I：
10.1117/12.2582781
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-resolution X-ray diffraction (HR-XRD), and low-temperature photoluminescence spectroscopy (LT-PL) are used to investigate the structural properties and inhomogeneities of high current density InGaAs/AlAs/InP resonant tunnelling diode (RTD) wafer structures. The non-destructive assessment of these structures is challenging, with structural variables: well and barriers thickness and the well indium molar fraction, in addition to electronic variables such as the band-offsets being functions of strain, growth sequence, etc.. Experimental PL data are compared with simulations allowing the deconvolution of the PL spectra, that includes Type I and Type II transitions broadened by interface fluctuations on length scales smaller and much larger than the exciton. This method provides details of the non-uniformity of the epitaxial material non-destructively.
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页数：8
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