The structure of Ba2Nb5O9 can be described as an intergrowth between perovskite- (BaNbO3) and NbO-type slabs. The substitution of Ti for Nb according to the formula Ba2Nb5-xTixO9 (0.00 less than or equal to x less than or equal to 1.75) has been investigated. The decrease in unit cell parameters as a function of overall composition determined by microanalysis shows the maximum value of n to be around 0.9. At higher x values increasing amounts of BaNb1-yTiyO3 and Nb were found. Rietveld refinements of the structure using X-ray powder diffraction data show Ti to prefer Nb positions in the perovskite slab (NbO6 octahedra) and the Nb positions in the NbO slab closest to the perovskite slabs. This latter Nb is five-fold coordinated by oxygen atoms, forming a square pyramid. The third Nb position, in the middle of the NbO slab with a square planar coordination of oxygen atoms, remains undoped. The electrical resistivity and magnetic susceptibility of the x = 0.0, 0.25, 0.50 and 0.75 samples were measured. All samples were found to be metallic conductors and temperature-independent paramagnetic.
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Korea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South KoreaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Thakur, P.
Chae, K. H.
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Korea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South KoreaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Chae, K. H.
Whang, C. N.
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Yonsei Univ, Dept Phys, Seoul 120749, South KoreaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Whang, C. N.
Chang, G. S.
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Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, CanadaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Chang, G. S.
Shukla, D. K.
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Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, IndiaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Shukla, D. K.
Mollah, S.
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Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, IndiaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
Mollah, S.
Kumar, Ravi
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Inter Univ Accelerator Ctr, New Delhi 110067, IndiaKorea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South Korea
Kumar, Shalendra
Koo, B. H.
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South Korea
Koo, B. H.
Lee, Chan Gyu
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Changwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South Korea
Lee, Chan Gyu
Gautam, S.
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Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South Korea
Gautam, S.
Chae, K. H.
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Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South KoreaChangwon Natl Univ, Sch Nano & Adv Mat Engn, 9 Sarim Dong, Chang Won 641773, South Korea