Three-dimensional nanometrology of microstructures by replica molding and large-range atomic force microscopy

被引:8
|
作者
Stohr, Frederik [1 ]
Michael-Lindhard, Jonas [1 ]
Simons, Hugh [2 ,3 ]
Poulsen, Henning Friis [2 ]
Hubner, Jorg [1 ]
Hansen, Ole [4 ,5 ]
Garnaes, Joergen [6 ]
Jensen, Flemming [1 ]
机构
[1] Tech Univ Denmark, DTU DANCHIP, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
[3] European Synchrotron Radiat Facil, ID06, F-38000 Grenoble, France
[4] Tech Univ Denmark, DTU Nanotech, DK-2800 Lyngby, Denmark
[5] Tech Univ Denmark, CINF, DK-2800 Lyngby, Denmark
[6] Danish Fundamental Metrol, DK-2800 Lyngby, Denmark
关键词
High-aspect ratio microstructures; Atomic force microscopy; Replication molding; X-ray optics;
D O I
10.1016/j.mee.2014.11.026
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have used replica molding and large-range atomic force microscopy to characterize the three-dimensional shape of high aspect ratio microstructures. Casting inverted replicas of microstructures using polydimethylsiloxane (PDMS) circumvents the inability of AFM probes to measure deep and narrow cavities. We investigated cylindrical deep reactive ion etched cavities in silicon wafers and determined the radius of curvature (ROC) of the sidewalls as a function of depth. Statistical analysis verified the reliability and reproducibility of the replication procedure. The mean ROC was determined as (6.32 +/- 0.06) mu m, i.e., with 1% accuracy, while the ROC linearly increases by (0.52 +/- 0.03) mu m from the top to the bottom of the sidewalls. Nanometer sized surface defects are also well replicated. In addition, the method allows combining multiple features from differently processed wafers into a single sample, accelerating characterization in process optimization tasks. To access the sidewall shape samples needed to be cleaved. The method was applied to study X-ray refractive optics, whose performance is crucially affected by their three dimensional shapes. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:6 / 11
页数:6
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