Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes

被引：0
|
作者：
Ohtani, N [1 ]
Rogozia, M [1 ]
Domoto, C [1 ]
Nishimura, T [1 ]
Grahn, HT [1 ]
机构：
[1] ATR, Adapt Commun Res Labs, Kyoto 6190288, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have performed a systematic investigation of the carrier density and temperature dependence of photocurrent self-oscillations in undoped GaAs/AlAs superlattices (SLs) embedded in p-i-n and n-i-n diodes. The SLs have almost identical well and barrier thicknesses, but their oscillating frequencies are considerably different. Two possibilities are discussed to explain the differences in the observed frequencies.
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页码：839 / 840
页数：2
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