Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells

被引：3

作者：

Tung Ha Thanh ^{[1
,2
]}

Vinh Lam Quang ^{[3
]}

Huynh Thanh Dat ^{[4
]}

机构：

[1] Ton Duc Thang Univ, Dept Management Sci & Technol Dev, Ho Chi Minh City, Vietnam

[2] Ton Duc Thang Univ, Fac Sci Appl, Ho Chi Minh City, Vietnam

[3] Vietnam Natl Univ, Univ Sci, Ho Chi Minh City, Vietnam

[4] Vietnam Natl Univ, Ho Chi Minh City, Vietnam

来源：

JOURNAL OF NANOMATERIALS | 2016年 / 2016卷

关键词：

TIO2; FILMS; EFFICIENT; SENSITIZATION; CDSE;

D O I：

10.1155/2016/9806386

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the effect of the surface treatment of the CdS/CdSe quantum dots (QDs) by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells (QDSSCs) based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F- ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm(2) to 14 mA/cm(2).

引用

页数：9

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