Optical transitions in InGaPN/GaP single quantum wells on GaP(100) substrates by MOVPE

被引：2
|
作者：
Sanorpim, S. [1 ]
Kaewket, D. [1 ]
Tungasmita, S. [1 ]
Katayama, R. [1 ]
Onabe, K. [1 ]
机构：
[1] Chulalongkorn Univ, Fac Sci, Dept Phys, Phayatai Rd, Bangkok 10330, Thailand
来源：
SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES | 2008年 / 31卷
关键词：
III-(III)-V-N; InGaPN; PL; PLE; quantum confinement effect; MOVPE;
D O I：
10.4028/www.scientific.net/AMR.31.224
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (L-Z = 1.6 - 6.4 nm) have been investigated by low-temperature photo luminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoetectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.
引用
收藏
页码：224 / +
页数：2
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