A study of the SrBi2Nb2O9 capacitor on flexible polymer substrate

被引：0
|
作者：
Park, SS
Ryu, MK
Cho, DH
Jang, MS [1 ]
机构：
[1] Pusan Natl Univ, Res Ctr Dielect & Adv Mat Phys, Pusan 609735, South Korea
[2] Korea Basic Sci Inst, Busan Branch, Pusan 609735, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷 / 01期
关键词：
a-SBN; rf sputtering; Peltier device; leakage current; optical properties;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the growth of amorphous SrBi2Nb2O9 (a-SBN) thin films on PET (Polyethylene Terephthalate) substrate. The deposition temperature of a-SBN thin films on PET substrate was about 60degreesC. This was controlled by Peltier device. The AZO and Pt electrodes were deposited on PET and a-SBN thin films, respectively. The results for capacitance-frequency and current-voltage measurements on a set of a-SBN capacitors with An and AZO electrodes are given, The leakage current and dielectric constant of the a-SBN films for the AZO/a-SBN/ITO structure were 1 X 10(-7) A /cm(2) at an applied field of 100 kV/cm and 125 at 1 kHz, respectively. The optical band-gap energy of the a-SBN film was 3.35 eV. The AZO/a-SBN/ITO structure, having a low leakage current and high dielectric constant, looks promising as a candidate for transparent and flexible capacitor device applications.
引用
收藏
页码：277 / 280
页数：4
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