Electron and hole transfer from indium phosphide quantum dots

被引：110
|
作者：
Blackburn, JL [1 ]
Selmarten, DC [1 ]
Ellingson, RJ [1 ]
Jones, M [1 ]
Micic, O [1 ]
Nozik, AJ [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 2005年 / 109卷 / 07期
关键词：
D O I：
10.1021/jp046781y
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new similar to4-ps component in the TA decay. It is found that electron transfer to TiO2 is primarily mediated through surface-localized states on the InP QDs.
引用
收藏
页码：2625 / 2631
页数：7
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