Factors influencing the length distributions of vapor-liquid-solid nanowires

被引:0
|
作者
Sibirev, N. V. [1 ]
Berdnikov, Y. [1 ]
Ren, X. [2 ]
Dubrovskii, V. G. [3 ]
机构
[1] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, POB 66,10 Xitucheng Rd, Beijing 100876, Peoples R China
[3] St Petersburg State Univ, Univ Skaya Emb 13B, St Petersburg 199034, Russia
基金
俄罗斯基础研究基金会;
关键词
Nanowires; length distributions; vapor-liquid-solid growth; NUCLEATION; GROWTH;
D O I
10.1109/iclo48556.2020.9285600
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Modeling and tuning the size distributions of nanostructures is a subject with long history. Recently, III-V semiconductor nanowires grown by the vapor-liquid-solid method attracted much attention in this respect, particularly for narrowing their length distributions to a highest possible degree of size homogeneity. In this work, we discuss the main factors influencing the length distributions within the ensembles of nanowires from a general perspective based on nucleation theory.
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页数:1
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