Recent advances in GaAs devices for use at high temperatures

被引：4
|
作者：
Würfl, J [1 ]
机构：
[1] Ferdinand Braun Inst Hochstfrequenztech, FBH, D-12489 Berlin, Germany
来源：
1998 HIGH-TEMPERATURE ELECTRONIC MATERIALS, DEVICES AND SENSORS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HTEMDS.1998.730659
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review on the technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes for example high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared with each other The paper closes with a short review on analogue and microwave integrated circuits operating at high temperatures.
引用
收藏
页码：106 / 116
页数：11
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