HIGH POWER 1550NM INGAASP/INP LASERS WITH OPTIMIZED CARRIER INJECTION EFFICIENCY

被引：0
|
作者：
Ke, Qing [1 ]
Tan, Shaoyang [1 ]
Lu, Dan [1 ]
Zhang, Ruikang [1 ]
Wang, Wei [1 ]
Ji, Chen [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
2015 14TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN) | 2015年
关键词：
high power; semiconductor laser; carrier injection;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of the laser performance on the distance of the P-InP layer to active region in 1.55-mu m high power InGaAsP/InP board area lasers is studied. Structures with different distance of P-InP layer to active region is compared in simulation and lasers with active region displaced towards the p-cladding layer is the best performance. A 1.55-mu m high power laser with optimized carrier injection efficiency is manufactured and a maximum single-mode power of 175 mW is obtained from a 1mm long uncoated laser.
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页数：3
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