Magneto-exciton in a GaN/Ga1-xAlxN quantum dot

被引:14
|
作者
Revathi, M. [2 ]
Yoo, ChangKyoo [3 ]
Peter, A. John [1 ]
机构
[1] Govt Arts & Sci Coll, Dept Phys, Madurai 625106, Tamil Nadu, India
[2] Yadava Coll, Dept Phys, Madurai 625014, Tamil Nadu, India
[3] Kyung Hee Univ, Coll Engn, Dept Environm Sci & Engn, Ctr Environm Studies,Green Energy Ctr, Yongin 446701, Gyeonggi Do, South Korea
来源
关键词
BOUND EXCITONS; GAN; PARAMETERS; BIEXCITONS; ALN;
D O I
10.1016/j.physe.2010.08.004
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Magneto-exciton bound donor is investigated theoretically in a GaN/Ga1-xAlx quantum dot within the framework of single band effective mass approximation and compared with the experimental results. Binding energies on excitons bound hydrogenic donors and the diamagnetic susceptibility are obtained as a function of dot radius and magnetic field. The valence-band anisotropy is included in our theoretical model using different hole masses in different spatial directions. Zeeman effect is calculated through the energy dependent effective mass. The dependence of donor bound exciton diamagnetic shift is found. The interband optical transition of GaN/Ga1-xAlxN dot is computed with various structural parameters in the influence of magnetic field. Our results show that (i) quantum size, the magnetic field and the interband optical transitions have a considerable influence on neutral donor exciton states, (ii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iii) the found diamagnetic shift is agreed with the other experimental investigator [Yoichi Yamada et al., 2000 [26]]. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:322 / 326
页数:5
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