Edge photoluminescence of single-crystal silicon at room temperature

被引：2

作者：

Gule, EG ^{[1
]}

Kaganovich, EB ^{[1
]}

Kizyak, IM ^{[1
]}

Manoilov, EG ^{[1
]}

Svechnikov, SV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 04期

关键词：

D O I：

10.1134/1.1900253

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The edge photoluminescence of single-crystal silicon (c-Si) with a peak at similar to 1.09 eV at room temperature is observed for structures that consist of nanocrystalline silicon (nc-Si) and c-Si. The structures are obtained by pulsed-laser deposition of an nc-Si film onto a c-Si substrate. The photoluminescence signal increases as both the density of surface states at the nc-Si/c-Si boundary and the scattering of the edge emission from c-Si in the nc-Si film decreases. (c) 2005 Pleiades Publishing, Inc.

引用

页码：406 / 408

页数：3

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