Passivation of carbon doping in InGaAs during ECR-CVD of SiNx

被引：11
|
作者：
Ren, F
Hamm, RA
Lothian, JR
Wilson, RG
Pearton, SJ
机构：
[1] Hughes Research Laboratories, Malibu
[2] University of Florida, Gainesville
来源：
SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 05期
关键词：
D O I：
10.1016/0038-1101(95)00392-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：763 / 765
页数：3
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