A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser

被引：4
|
作者：
Liu, Song-Tao [1 ]
Zhang, Rui-Kang
Lu, Dan
Kan, Qiang
Wang, Wei
Ji, Chen
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 06期
基金：
中国国家自然科学基金;
关键词：
MU-M; GENERATION; NOISE;
D O I：
10.1088/0256-307X/33/6/064205
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time-bandwidth product of 0.53 are obtained.
引用
收藏
页数：4
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