Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage

被引：93

作者：

Wu, Yanwen ^{[1
]}

Piper, I. M. ^{[1
]}

Ediger, M. ^{[1
]}

Brereton, P. ^{[1
]}

Schmidgall, E. R. ^{[1
]}

Eastham, P. R. ^{[2
]}

Hugues, M. ^{[3
]}

Hopkinson, M. ^{[3
]}

Phillips, R. T. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 06期

基金：

英国工程与自然科学研究理事会; 爱尔兰科学基金会;

关键词：

PHOTOCURRENT; OSCILLATIONS; PHOTODIODE;

D O I：

10.1103/PhysRevLett.106.067401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Preparation of a specific quantum state is a required step for a variety of proposed quantum applications. We report an experimental demonstration of optical quantum state inversion in a single semiconductor quantum dot using adiabatic rapid passage. This method is insensitive to variation in the optical coupling in contrast with earlier work based on Rabi oscillations. We show that when the pulse power exceeds a threshold for inversion, the final state is independent of power. This provides a new tool for preparing quantum states in semiconductor dots and has a wide range of potential uses.

引用

页数：4

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