Effect of passivation on frit glass bonding method for wafer level hermetic sealing on MEMS devices

被引：0
|
作者：
Chong, SC [1 ]
Zhang, XL [1 ]
Mohanraj, S [1 ]
Premachandran, CS [1 ]
Ranganathan, N [1 ]
机构：
[1] Inst Microelect, Singapore 117685, Singapore
来源：
PROCEEDINGS OF 5TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wafer level hermetic package has been developed for Micro-Electronics Mechanical System (MEMS) applications by wafer to wafer bonding method. A cap wafer, glass or silicon wafers was used on top of the MEMS device to protect the MEMS device during the assembly process. Frit glass paste is patterned on the cap wafer and is used as the intermediate layer for wafer bonding. The adhesion and reliability of frit glass bonding have been studied with different passivation materials, silicon oxide and silicon nitride. Verification on bonding quality was done by shear test, water test for the gross leak, fine leak test, and X-ray technique for voids inspection. Compatibility of the frit glass on oxide passivation can be improved with an additional annealing step before frit glass deposition.
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页码：307 / 310
页数：4
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