A Simulation Model for Digital Silicon Photomultipliers

被引:3
|
作者
Gnecchi, Salvatore [1 ,2 ]
Dutton, Neale A. W. [1 ,2 ]
Parmesan, Luca [1 ,2 ]
Rae, Bruce R. [1 ]
McLeod, Stuart J. [1 ]
Pellegrini, Sara [1 ]
Grant, Lindsay A. [1 ]
Henderson, Robert K. [2 ]
机构
[1] ST Microelect Imaging Div, Edinburgh, Midlothian, Scotland
[2] Univ Edinburgh, Edinburgh, Midlothian, Scotland
基金
英国工程与自然科学研究理事会;
关键词
DSiPM; model; silicon photomultipliers; single photon avalanche diodes; SPAD;
D O I
10.1109/TNS.2016.2550494
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a simulator model to estimate the performance of digital Silicon Photomultipliers (dSiPM) based on Single Photon Avalanche Diodes (SPADs) in terms of detection rate of photons incident on the sensor. The work provides guidelines for efficient array structure depending on: the number of SPADs, fill factor, area of both SPADs and array. A comparison of the main techniques present in the literature to digitally combine multiple outputs into single channel is included with simulated results showing promising higher detection rates for XOR-based dSiPMs. Mathematical expressions are derived to estimate dSiPM parameters such as maximum detection rate and detector dead time as functions of the mentioned design parameters.
引用
收藏
页码:1343 / 1350
页数:8
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