Mechanism of enhanced mobility and conductivity at donor-acceptor organic interfaces

被引:6
|
作者
Nikitenko, V. R. [1 ]
Tameev, A. R. [2 ]
Vannikov, A. V. [2 ]
机构
[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
[2] RAS, AN Frumkin Inst Phys Chem & Electrochem, Moscow 119991, Russia
基金
俄罗斯基础研究基金会;
关键词
Organic semiconductors; Donor-acceptor interface; Integer charge transfer; Energy level alignment; Charge delocalization; Charge carrier transport; CHARGE-TRANSPORT; ELECTROLUMINESCENCE;
D O I
10.1016/j.orgel.2011.01.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The model of metallic type or enhanced hopping conductivity with reduced activation energy at the donor-acceptor interface formed by organic dielectrics is suggested. High density of electrons and holes at the interface arises due to the integer charge transfer from donor to acceptor molecules. Significant part of charge carriers can avoid thermal activation and tunneling in course of their transport if the interfacial energy barrier is low enough. The critical value of an interfacial energy barrier, density of free electrons, the values of two-dimensional mobility and conductivity of charge carriers are estimated by numerical modeling and compared with experimental data. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:589 / 594
页数:6
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