Contact Analysis of Elemental Transition Metal Electrodes for Complementary 2D-FET Applications Using MoS2 and WSe2

被引:0
|
作者
Prashant, Kumar [1 ]
Nayak, Kaushik [1 ]
机构
[1] IIT Hyderabad, Dept Elect Engn, Hyderabad 502285, India
关键词
Contact; density of states; entropy; exchange energy; MoS2; transition metals; WSe2; APPROXIMATION; TRANSISTORS; ENERGY;
D O I
10.1109/LED.2022.3180083
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
First principle calculations for efficient transition metal contacts with monolayer MoS2-WSe2 are carried out for complementary device application. The four parameters analysed are exchange energy, density of states, entropy measurements, and effective potential periodicity at interface. Each characterises the electrical contact, as exchange energy establishes stable interface with minimum energy (contacts with strong bonding); density of states determines the charge polarity selection (electron or hole transport) and carrier flow rate through interfaces; entropy measurement reveal contacts with minimum phonon scattering rate (enhanced mobility); and effective potential continuity provides an alternative view of contact resistance from quantum mechanical perspective. Combining these results reveal that in specific crystallographic orientation among the 3d group: V, Cr, Co, and Ni; from 4d group: Tc, Ru, Pd, Ag and from 5d group: Ir, Pt, Au form suitable elemental electrodes for MoS2-WSe2 complementary FET applications.
引用
收藏
页码:1137 / 1140
页数:4
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