Tuning the electronic effective mass in double-doped SrTiO3

被引：39

作者：

Ravichandran, J. ^{[1
,2
]}

Siemons, W. ^{[3
]}

Scullin, M. L. ^{[2
,4
]}

Mukerjee, S. ^{[3
,5
]}

Huijben, M. ^{[3
,6
,7
]}

Moore, J. E. ^{[2
,3
]}

Majumdar, A. ^{[1
,2
,4
,8
]}

Ramesh, R. ^{[2
,3
,4
]}

机构：

[1] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[6] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[7] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[8] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 03期

关键词：

TRANSPORT-PROPERTIES; HIGH-TEMPERATURE; THIN-FILMS; SILICON; GAP;

D O I：

10.1103/PhysRevB.83.035101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO3-delta, we can tune the effective mass ranging from 6 to 20m(e) as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum-and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-delta. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors.

引用

页数：5

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