Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be

Characteristic 1.54 mu m 4f-4f emission has been observed from Er3+ centers in Er-implanted and annealed, low-temperature grown GaAs: Be samples, while cross-sectional transmission electron microscopy (TEM) studies reveal very little structural damage for elevated temperature implants. No Er emission was observed from any of the as-implanted samples, while the Er emission intensity was significantly more intense after 650 degrees C anneals than after 750 degrees C anneals. Significant enhancement of the optically active Er incorporation was achieved when the implantation was carried out at 300 degrees C. For the two total Er fluences employed (5.5x10(13) and 13.6x10(13) Er/cm(2)) the Er emission intensity exhibited a linear dependence upon implantation fluence, while TEM indicated no significant increase in the damage level at the higher fluence 300 degrees C implant. (C) 1998 American Institute of Physics. [S0003-6951(98)04641-5].