Refractive index sensing using silicon-on-insulator waveguide based modal interferometer

被引:11
|
作者
Dwivedi, Ranjeet [1 ]
Kumar, Arun [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
来源
OPTIK | 2018年 / 156卷
关键词
Refractive index sensor; Integrated optical waveguide; Modal interference; Silicon-on-insulator; INTERFERENCE;
D O I
10.1016/j.ijleo.2017.12.040
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We propose a refractive index sensor based on modal interference between the first two TE modes in a silicon-on-insulator dual-mode waveguide. It is shown that by appropriately choosing the waveguide dimensions one can achieve a large variation of the modal effective index difference with the ambient refractive index (ARI) as well as a smaller group effective index difference between the two modes, resulting in an extremely high RI sensitivity in the wavelength interrogation scheme. The RI sensitivity of the proposed sensor is found to be similar to 9100 nm/RIU for the ARI similar to 1.33, which is the highest reported RI sensitivity achieved in the integrated optic modal interferometers till date. The figure of merit is also found to be extremely high and is more than 2800. (C) 2017 Elsevier GmbH. All rights reserved.
引用
收藏
页码:961 / 967
页数:7
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