Comparative study on 980-nm quantum-dot and quantum-well laser diode

被引：0

作者：

Kim, K. W. ^{[1
]}

Jung, K. W. ^{[1
]}

Ryu, S. P. ^{[1
]}

Cho, N. K. ^{[1
]}

Lim, J. Y. ^{[1
]}

Park, S. J. ^{[1
]}

Song, J. D. ^{[1
]}

Choi, W. J. ^{[1
]}

Lee, J. I. ^{[1
]}

Park, J. H. ^{[2
]}

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, POB 131, Seoul 130650, South Korea

[2] Korea Univ, Dept Electron & Comp Engn, Seoul 136-701, South Korea

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.

引用

页码：274 / +

页数：2

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