Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes

被引：10

作者：

Baert, B. ^{[1
]}

Gupta, S. ^{[2
,3
]}

Gencarelli, F. ^{[2
,3
]}

Loo, R. ^{[2
]}

Simoen, E. ^{[2
]}

Nguyen, N. D. ^{[1
]}

机构：

[1] Univ Liege, Dept Phys Solid State Phys Interfaces & Nanostruc, B-4000 Liege, Belgium

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, MTM Dept, B-3001 Leuven, Belgium

来源：

SOLID-STATE ELECTRONICS | 2015年 / 110卷

关键词：

GeSn; Electrical characterization; I-V characteristics; C-V characteristics; Numerical simulation; Admittance spectroscopy; SELECTIVE EPITAXIAL-GROWTH; NUMERICAL-SIMULATION; ENERGY-DISTRIBUTION; ACTIVATION-ENERGY; LEAKAGE CURRENT; EXTRACTION; IMPEDANCE;

D O I：

10.1016/j.sse.2015.01.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the electrical properties of p-GeSn/n-Ge diodes are investigated in order to assess the impact of defects at the interface between Ge and GeSn using temperature-dependent current voltage and capacitance voltage measurements. These structures are made from GeSn epitaxial layers grown by CVD on Ge with in situ doping by Boron. As results, an average ideality factor of 1.2 has been determined and an activation energy comprised between 0.28 eV and 0.30 eV has been extracted from the temperature dependence of the reverse-bias current. Based on the comparison with numerical results obtained from device simulations, we explain this activation energy by the presence of traps located near the GeSn/Ge interface. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：65 / 70

页数：6

共 5 条

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[4] Analysis of the electrical properties of p-n GaAs homojunction under dc and ac fields
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[5] A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs
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