Amplified Spontaneous Emission from Thermally Evaporated High- Quality Thin Films of CsPb(Br1-XYX)3 (Y = I, Cl) Perovskites

被引:15
|
作者
Ghaithan, Hamid M. [1 ]
Qaid, Saif M. H. [1 ,3 ]
AlHarbi, Khulod K. [1 ]
Ajaj, Abrar F. Bin [1 ]
Al-Asbahi, Bandar Ali [1 ,2 ]
Aldwayyan, Abdullah S. [4 ]
机构
[1] King Saud Univ, Coll Sci, Phys & Astron Dept, Riyadh 11451, Saudi Arabia
[2] Sanaa Univ, Fac Sci, Dept Phys, Sanaa 12544, Yemen
[3] Ibb Univ, Fac Sci, Dept Phys, Ibb 70270, Yemen
[4] King Saud Univ, Coll Sci & KA CARE Energy Res, Innovat Ctr, Phys & Astron Dept, Riyadh 11451, Saudi Arabia
关键词
LIGHT-EMITTING-DIODES; HALIDE PEROVSKITES; CRYSTAL-STRUCTURE; PHASE-TRANSITIONS; LEAD; CESIUM; NANOCRYSTALS; CSPBBR3; CSPBX3; EFFICIENCY;
D O I
10.1021/acs.langmuir.2c00861
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As a wavelength-tunable lasing material, perovskites are now generating a lot of scientific attention. Conventional solution-processed CsPbX3 perovskite films sometimes suffer unavoidable pinhole defects and poor surface morphology, severely limiting their performance on amplified spontaneous emission (ASE) and lasing application. Herein, a thermal evaporation approach is explored in our work to achieve a uniform and high-coverage CsPb(Br1-xYx)(3) (Y = I, Cl) perovskites polycrystalline thin film. The ASE of these films was studied using a picosecond laser system. The ASE profile increases rapidly over the narrow peak in relation to the laser pump intensity, confirming the development of stimulated emission. ASE began when the energy density threshold was reached and ranged between 25 and 170 mu J/cm(2) per pulse for perovskite materials when replacing I with Br and then Cl. This work emphasizes the notable optical properties of high-quality perovskite thin films, leading to possible accessible uses in optoelectronic applications.
引用
收藏
页码:8607 / 8613
页数:7
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