Photoacoustic measurement of the thermal diffusivity of Bi added Ge-Se and Ge-Se-Te glasses

被引：10
|
作者：
Thangaraju, B [1 ]
Ganesan, R [1 ]
Sangunni, KS [1 ]
Gopal, ESR [1 ]
机构：
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 05期
关键词：
disordered systems; semiconductors; thermodynamic properties;
D O I：
10.1016/S0038-1098(98)00363-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoacoustic (PA) technique has been employed to measure the thermal diffusivity of Ge20BixSe80-x (x at.% = 2 to 11) and Ge20BixSe70-xTe10 (x at.% = 2.5 to 12) glasses. The PA cell developed for these studies is also described briefly. The thermal diffusivity measurements show an anomaly near the p to n transition. Possible explanations have been given in the light of percolation threshold and chemically ordered network model. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：301 / 305
页数：5
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