Effects of disorder on the non-zero temperature Mott transition

被引:23
|
作者
Aguiar, MCO
Dobrosavljevic, V
Abrahams, E
Kotliar, G
机构
[1] Rutgers State Univ, Ctr Mat Theory, Serin Phys Lab, Piscataway, NJ 08854 USA
[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 20期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.71.205115
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The physics of the metal-insulator coexistence region near the nonzero temperature Mott transition is investigated in presence of weak disorder. We demonstrate that disorder reduces the temperature extent and the general size of the coexistence region, consistent with recent experiments on several Mott systems. We also discuss the qualitative scenario for the disorder-modified Mott transition, and present simple scaling arguments that reveal the similarities to, and the differences from, the clean limit.
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页数:7
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