Developments of SOI monolithic pixel detectors

被引：43

作者：

Arai, Y. ^{[1
]}

Miyoshi, T. ^{[1
]}

Unno, Y. ^{[1
]}

Tsuboyama, T. ^{[1
]}

Terada, S. ^{[1
]}

Ikegami, Y. ^{[1
]}

Kohriki, T. ^{[1
]}

Tauchi, K. ^{[1
]}

Ikemoto, Y. ^{[1
]}

Ichimiya, R. ^{[1
]}

Ikeda, H. ^{[2
]}

Hara, K. ^{[3
]}

Miyake, H. ^{[3
]}

Kochiyama, M. ^{[3
]}

Sega, T. ^{[3
]}

Hanagaki, K. ^{[4
]}

Hirose, M. ^{[4
]}

Hatsui, T. ^{[5
]}

Kudo, T. ^{[5
]}

Hirono, T. ^{[5
]}

Yabashi, M. ^{[5
]}

Furukawa, Y. ^{[5
]}

Varner, G. ^{[6
]}

Cooney, M. ^{[6
]}

Hoedlmoser, H. ^{[6
]}

Kennedy, J. ^{[6
]}

Sahoo, H. ^{[6
]}

Battaglia, M. ^{[7
]}

Denes, P. ^{[7
]}

Vu, C. ^{[7
]}

Contarato, D. ^{[7
]}

Giubilato, P. ^{[7
]}

Glesener, L. ^{[7
]}

Yarema, R. ^{[8
]}

Lipton, R. ^{[8
]}

Deptuch, G. ^{[8
]}

Trimpl, M. ^{[8
]}

Ohno, M.

Fukuda, K. ^{[9
]}

Komatsubara, H. ^{[9
]}

Ida, J. ^{[9
]}

Okihara, M. ^{[10
]}

Hayashi, H. ^{[10
]}

Kawai, Y. ^{[10
]}

Ohtomo, A. ^{[10
]}

机构：

[1] High Energy Accelerator Org, Inst Particle & Nucl Studies, KEK, Tsukuba, Ibaraki 3050801, Japan

[2] JAXA, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

[3] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan

[4] Osaka Univ, Osaka 5600043, Japan

[5] RIKEN, Sayo, Hyogo 6795148, Japan

[6] Univ Hawaii, Dept Phys & Astron, Honolulu, HI 96822 USA

[7] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[8] Fermilab Natl Accelerator Lab, Batavia, IL 60510 USA

[9] Oki Semicond Co Ltd, Higashiasakawa, Tokyo 1938550, Japan

[10] Oki Semicond Miyagi Co Ltd, Ohira, Miyagi 9813693, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 623卷 / 01期

关键词：

SOI; Pixel; X-ray imaging; Particle tracking;

D O I：

10.1016/j.nima.2010.02.190

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A monolithic pixel detector with 0.2 mu m silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：186 / 188

页数：3

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