Diamagnetic susceptibility of hydrogenic donor impurity in a V-groove GaAs/Ga1- x Al x As quantum wire

被引:43
|
作者
Khordad, R. [1 ]
机构
[1] Univ Yasuj, Dept Phys, Yasuj 75914353, Iran
来源
EUROPEAN PHYSICAL JOURNAL B | 2010年 / 78卷 / 03期
关键词
WELL WIRES; BINDING-ENERGY; MAGNETIC-FIELD; EXCITED-STATES; CONFINEMENT; ELECTRON; GAAS-GA1-XALXAS; TEMPERATURE; MODEL; DOTS;
D O I
10.1140/epjb/e2010-10290-x
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, the diamagnetic susceptibility and the binding energy of a hydrogenic donor impurity both in the parabolic and non-parabolic conduction band models have been calculated within the effective mass approximation for a V-groove GaAs/Ga1- (x) Al (x) As quantum wire. According to the results obtained from the present work reveals that (i) the value of diamagnetic susceptibility due to the non-parabolicity effect is higher than that of parabolicity effect; (ii) the values of diamagnetic susceptibility and binding energy due to the non-parabolicity effect is not appreciable at low Al mole fractions; (iii) the diamagnetic susceptibility approaches to the bulk value both in L -> infinity; (iv) the effect of non-parabolocity is not appreciable in the binding energy and energy dependent effective mass, for energies lower than 50 MeV.
引用
收藏
页码:399 / 403
页数:5
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