Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices

被引：3
|
作者：
Chaji, G. Reza [1 ]
Safavian, Nader [1 ]
Nathan, Arokia [2 ,3 ]
机构：
[1] Univ Waterloo, Elect & Comp Dept, Waterloo, ON N2L 3G1, Canada
[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[3] Ignis Innovat Inc, Waterloo, ON, Canada
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2008年 / 56卷 / 1-2期
基金：
加拿大自然科学与工程研究理事会;
关键词：
amorphous silicon; threshold voltage shift; sensor array; AMOLED display;
D O I：
10.1007/s10470-007-9082-4
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is essential for implementation of large-area devices including displays and sensor arrays for bio-imaging applications. In particular, for high precision and high-resolution devices, the technique should be accurate and fast. A new driving scheme is presented that enables control of the DC and transient shift in the threshold voltage (V-T) and gate voltage of drive/amplifier TFT, while fulfilling the timing requirements for the different applications. The transient shift in the gate voltage has been known to contribute as much as 10% error in controlling the DC shift in the VT whereas it is less than 0.5% for the driving scheme presented here.
引用
收藏
页码：143 / 151
页数：9
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