Radiation damage studies of multipixel Geiger-mode avalanche photodiodes

被引：25
|
作者：
Musienko, Y. [1 ]
Renker, D.
Reucroft, S.
Scheuermann, R.
Stoykov, A.
Swain, J.
机构：
[1] Northeastern Univ, Boston, MA 02115 USA
[2] Paul Scherrer Inst, Villigen, Switzerland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 581卷 / 1-2期
关键词：
photodiodes; silicon radiation detectors;
D O I：
10.1016/j.nima.2007.08.021
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Results on the radiation hardness of multipixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from three manufacturers (Hamamatsu (Japan), CPTA(Russia) and Mikron/Dubna(Russia)) were exposed to 28 MeV positrons with fluences up to 8 x 10(10) positrons/cm(2) at the Paul Scherrer Institute. The effects of this radiation on many G-APD paramaters such as gain, photon detection effiency, dark current and count rate for these devices are shown and discussed. (C) 2007 Elsevier B.V. All rights resrved.
引用
收藏
页码：433 / 437
页数：5
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