Repulsive impurity doped quantum dot subjected to oscillatory confinement potential: Role of dopant strength and dopant location on time-evolution

被引:10
|
作者
Datta, Nirmal Kumar [1 ,2 ]
Ghosh, Manas [1 ]
机构
[1] Visva Bharati Univ, Dept Chem, Chem Phys Sect, Birbhum 731235, W Bengal, India
[2] Suri Vidyasagar Coll, Dept Phys, Birbhum 731101, W Bengal, India
关键词
Quantum dot; Confinement potential; Impurity doping; Impurity coordinate; Impurity potential; Transition rate; HYDROGENIC-DONOR STATES; BINDING-ENERGY; MAGNETIC-FIELD; ELECTRON; PHOTOLUMINESCENCE;
D O I
10.1016/j.solidstatesciences.2010.07.014
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We explore the pattern of time evolution of eigenstates of a repulsive impurity doped quantum dot. The quantum dot is 2-dimensional and contains one electron which is harmonically confined. We have considered Gaussian impurity centers. A static transverse magnetic field is also present. Under a periodically fluctuating confinement potential, the system reveals a long time dynamics. The investigation points to a typical value of impurity potential strength at which the excitation is maximum. This typical value has also been found to be strongly dependent on dopant location. The rate of transition between the eigenstates depends delicately on several impurity dependent factors modulated by the oscillating confinement potential and explains the excitation maximization quite elegantly. (C) 2010 Elsevier Masson SAS. All rights reserved.
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页码:1620 / 1628
页数:9
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