High-performance undoped-body 8-nm-thin SOI field-effect transistors

被引：26

作者：

Majumdar, Amlan ^{[1
]}

Ren, Zhibin ^{[2
]}

Sleight, Jeffrey W. ^{[1
]}

Dobuzinsky, David ^{[2
]}

Holt, Judson R. ^{[2
]}

Venigalla, Raj ^{[2
]}

Koester, Steven J. ^{[1
]}

Haensch, Wilfried ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Microelect Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 05期

关键词：

CMOSFETs; epitaxial growth; ion implantation;

D O I：

10.1109/LED.2008.920975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated undoped-body short-channel extremely thin silicon-on-insulator (ETSOI) field-effect transistors (FETs) with 8-nm SOI thickness that exhibit the expected short-channel benefit compared with doped partially depleted SOI (PDSOI) FETs. Using a source/drain extension (SDE) last process with the SDE implants activated with diffusionless laser anneal, we demonstrate that the series resistance penalty can be minimized, which leads to ETSOI FET drive currents that are comparable to those of conventional thick-body PDSOI FETs.

引用

页码：515 / 517

页数：3

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