An 18-GHz 300-mW SiGe power HBT

被引：18
|
作者：
Ma, ZQ [1 ]
Jiang, NY
Wang, GG
Alterovitz, SA
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 06期
基金：
美国国家科学基金会;
关键词：
common-base; heterojunction bipolar transistors (HBTs); SiGe;
D O I：
10.1109/LED.2005.848619
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2 x 30 mu m(2) of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.
引用
收藏
页码：381 / 383
页数：3
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