MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS

被引：2
|
作者：
Zhao, Chang [1 ]
Zhao, M. [1 ]
Wang, Y. [1 ]
Lv, A. J. [1 ]
Wu, G. M. [1 ]
Xing, G. J. [1 ]
机构：
[1] Beijing Inst Petrochem Technol, Dept Math & Phys, Beijing 102617, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2011年 / 25卷 / 07期
关键词：
Quantum dot; kinetics effect; molecular beam epitaxy; LAYER;
D O I：
10.1142/S0217984911025869
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By means of kinetic Monte Carlo simulation, which is based on the random selection of the surface hops of single adatom, we investigate the atoms' kinetics during the growth of the semiconductor quantum dots in a molecular beam epitaxy system, the deposition, diffusion and nucleation are considered as the main relevant processes during the growth of the quantum dots, taking into account the contribution of the dangling bond of the adatoms in the simulation. The dependence of the quantum dot size on the temperature and flux as well as the atomic kinetic effects are discussed in detail. The simulation results are in good qualitative agreement with those of the experiment.
引用
收藏
页码：465 / 471
页数：7
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