Wideband Input Matching CMOS Low-Noise Amplifier with Noise and Distortion Cancellation

In this paper, a wideband low-noise amplifier (LNA) is designed based on the resistive feedback topology with a TSMC 0.18 mu m standard RF CMOS process. Bandwidth expansion is provided by the second-order Chebyshev filter. The noise figure (NF) increases at high frequency because of the source parasitic capacitors of the cascode transistor; so, noise cancelling technique is applied to the cascode transistor of the proposed LNA. Bias conditions and sizes of the transistors are optimized to cancel the nonlinear transconductance (g(m)', g(m)'). With this modified technique, low noise figure, high linearity and improved input and output matching can be attained for 3.1-10.6 GHz frequency band. Post-layout simulation result of the proposed LNA shows the maximum power gain of 17 dB at 5.5 GHz frequency, NF of lower than 4.5 dB over the whole band of 3.1-10.6 GHz, maximum IIP2 of +28 dBm and IIP3 of +7.5 dBm, while dissipating 9 mW (with buffer) from a 1.8 V supply voltage. It occupies 773.3 mu m x 676 mu m silicon die area.