Bulk-driven class AB fully-balanced differential difference amplifier

被引:3
|
作者
Khateb, Fabian [1 ,2 ]
Vlassis, Spyridon [3 ]
Kulej, Tomasz [4 ]
Souliotis, George [5 ]
机构
[1] Brno Univ Technol, Dept Microelect, Tech 10, Brno, Czech Republic
[2] Czech Tech Univ, Fac Biomed Engn, Joint Ctr Biomed Engn, Nam Sitna 3105, Kladno, Czech Republic
[3] Univ Patras, Phys Dept, Elect Lab, Rion 26504, Achaia, Greece
[4] Czestochowa Tech Univ, Dept Elect Engn, PL-42201 Czestochowa, Poland
[5] Technol Educ Inst Western Greece, Dept Elect Engn, Patras 26334, Greece
关键词
Bulk-driven CMOS; Low-voltage low-power CMOS; FB-DDA; BUILDING-BLOCKS; CIRCUIT; DESIGN; CMOS;
D O I
10.1007/s10470-017-1024-1
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 mu W. The open loop voltage gain is 68 dB and the gain-bandwidth product is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 mu m CMOS process.
引用
收藏
页码:179 / 187
页数:9
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