A STUDY OF IMAGE CONTRAST, STOCHASTIC DEFECTIVITY, AND OPTICAL PROXIMITY EFFECT IN EUV PHOTOLITHOGRAPHIC PROCESS UNDER TYPICAL 5 NM LOGIC DESIGN RULES

被引：0

作者：

Wu, Qiang ^{[1
]}

Li, Yanli ^{[1
]}

Yang, Yushu ^{[1
]}

Chen, Shoumian ^{[1
]}

机构：

[1] Shanghai IC R&D Ctr, 497 Gaosi Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

关键词：

D O I：

10.1109/cstic49141.2020.9282499

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The introduction of Extremely Ultra-Violet (EUV) lithography in the photolithographic process can simplify process flow at 7 nm or more advanced technology nodes, which includes good linewidth and overlay budget control and reduction of hard mask layers. In a typical 5 nm logic process, the Contact-Poly Pitch (CPP) is 44-50 nm, the Minimum Metal Pitch (MPP) is 30-32 nm. And the overlay budget is estimated to be 2.5 nm ( On Product Overlay, OPO). We have studied the process window of the 5 nm lithographic process with a self-developed RCWA algorithm based EUV simulation program and will present our results on process window and defectivity.

引用

页数：7

共 2 条

[1] A Simulation Study for Typical Design Rule Patterns and Stochastic Printing Failures in a 5 nm Logic Process with EUV Lithography
Li, Yanli
Wu, Qiang
Zhao, Yuhang
2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020), 2020,
[2] A STUDY OF THE VIA PATTERN LITHOGRAPHY PROCESS WINDOW UNDER THE 7 NM LOGIC DESIGN RULES WITH 193 NM IMMERSION LITHOGRAPHY
Zhu, Jinhao
Liu, Xianhe
Wang, Qi
Li, Ying
Wu, Qiang
Li, Yanli
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,

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