Epitaxial growth of (100) Fe3Si thin films on insulating substrates

被引:2
|
作者
Akiyama, Kensuke [1 ]
Kadowaki, Teiko [1 ]
Kaneko, Satoru [1 ]
Kyoduka, Azusa [2 ]
Sawada, Yutaka [2 ]
Funakubo, Hiroshi [3 ]
机构
[1] Kanagawa Ind Technol Ctr, Ebina, Kanagawa 2430435, Japan
[2] Tokyo Polytech Univ, Kanagawa 2430297, Japan
[3] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2288505, Japan
关键词
physical vapor deposition processes; metals; magnetic materials;
D O I
10.1016/j.jcrysgro.2007.11.076
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
(1 0 0)-Oriented Fe3Si films were epitaxially grown on the (1 0 0) MgO and (1 0 0) MgAl2O4 substrates by using rf sputtering. The lattice-mismatch relationship between Fe3Si and oxide single crystal affected the crystal growth of the (1 0 0)-oriented Fe3Si film. The lattice parameters of the epitaxial film on the (1 0 0) MgO substrates were almost the same as those of the bulk sample and the lattice-matching strain in the films was released, while the lattice-matching strain remained in the epitaxial films on the (1 0 0) MgAl2O4 substrates. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:1703 / 1707
页数:5
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