InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy

被引：4
|
作者：
Teng, Teng [1 ]
Ai, Likun [1 ]
Xu, Anhuai [1 ]
Sun, Hao [1 ]
Zhu, Fuying [1 ]
Qi, Ming [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期
关键词：
Gas source molecular beam epitaxy (GSMBE); InP; InGaAs; Graded composition base; Double heterojunction bipolar transistor (DHBT); HETEROJUNCTION BIPOLAR-TRANSISTORS; COLLECTOR;
D O I：
10.1016/j.jcrysgro.2010.12.080
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A new InP/InGaAs/InP DHBT structure with graded composition base was optimized and grown successfully in this work. The gallium (Ga) composition increased gradually from 47% on the collector side to 55% on the emitter side. The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy (GSMBE). Characteristics of InP, InGaAs and InGaAsP materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100 x 100 mu m(2) was fabricated. The offset voltage of 0.2 V. BVCEO > 1.2 V. current gain of beta=550 at V-CE of 1.0 V were achieved. The reasons for the low breakdown voltage were analyzed. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：525 / 528
页数：4
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