Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

被引：4

作者：

Hajlasz, Marcin ^{[1
,2
]}

Donkers, Johan J. T. M. ^{[3
]}

Pandey, Saurabh ^{[4
]}

Hurkx, Fred ^{[3
]}

Hueting, Raymond J. E. ^{[2
]}

Gravesteijn, Dirk J. ^{[2
]}

机构：

[1] Mat Innovat Inst, NL-2628 XG Delft, Netherlands

[2] Univ Twente, MESA Inst Nanotechnol, NL-7522 NB Enschede, Netherlands

[3] NXP Semicond, NL-5656 AE Eindhoven, Netherlands

[4] Nexperia, Stockport SK75BJ, Lancs, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 10期

关键词：

AlGaN/GaN; diode; Schottky barrier height (SBH); strain; stress; WORK FUNCTION; GAN; HETEROSTRUCTURES;

D O I：

10.1109/TED.2017.2742991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal-semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to showthat no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain.

引用

页码：4050 / 4056

页数：7

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