Role of Argon plasma on the Structural and Morphological Properties of Silicon Nitride Films by Pulsed DC Glow Discharge

被引：0
|
作者：
Abbas, K. [1 ]
Ahmad, R. [2 ]
Khan, I. A. [3 ]
Ikhlaq, U. [1 ]
Saleem, S. [1 ]
Ahson, R. [1 ]
机构：
[1] Govt Coll Univ, Dept Phys, Lahore, Pakistan
[2] Govt Coll Univ, CASP, Lahore, Pakistan
[3] GC Univ, Dept Phys, Faisalabad, Pakistan
来源：
2013 INTERNATIONAL CONFERENCE ON AEROSPACE SCIENCE & ENGINEERING (ICASE) | 2013年
关键词：
Nitridation; nitrogen-argon plasma; crystallinity; stress; sputtering; nano-rods; AUSTENITIC STAINLESS-STEEL; CHEMICAL-VAPOR-DEPOSITION; ALUMINUM; ION; PRESSURE; GROWTH;
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
The role of argon gas concentration on silicon nitride layer formation by using Pulsed dc glow discharge is investigated by exposing Si (100) to different N-2/Ar plasma for 4 hrs at 2 mbar pressure and 175 W power. XRD results show the development of different planes of silicon nitride which confirms the formation of silicon nitride films. The peak broadening, overlapping and shifting from their stress free values are attributed to the argon nitrogen plasma concentrations. SEM results show the formation of nitride film. AFM images shows that silicon nitride films are rough in nature and their roughness is increased with argon. Maximum surface roughness is observed for 20% argon while minimum surface roughness is observed at 10% argon content in nitrogen-argon plasma.
引用
收藏
页码：80 / 84
页数：5
相关论文
共 50 条
  • [1] Structural characterization and transport properties of diamond films prepared by dc plasma glow discharge CVD
    Bacci, T
    Borchi, E
    Bruzzi, M
    Santoro, M
    Sciortino, S
    [J]. INORGANIC MATERIALS, 1998, 34 (04) : 321 - 331
  • [2] THE EFFECT OF GLOW-DISCHARGE CHARACTERISTICS ON THE PROPERTIES OF PLASMA-CVD SILICON-NITRIDE FILMS
    HIRAIWA, A
    MUKAI, K
    TAKAHASHI, S
    HARADA, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C104 - C105
  • [3] Bulk plasma properties in the pulsed glow discharge
    Jackson, GP
    King, FL
    [J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2003, 58 (08) : 1417 - 1433
  • [4] Plasma nitriding of aluminium in a pulsed dc glow discharge of nitrogen
    Naseer, S.
    Khan, F. U.
    Rehman, N. U.
    Qayyum, A.
    Rahman, F.
    Zakaullah, M.
    [J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2010, 49 (02):
  • [5] Characterization of hexamethyldisiloxane plasma polymerization in a DC glow discharge in an argon flow
    Batrakov, A. V.
    Markov, A. B.
    Zuza, D. A.
    Nekhoroshev, V. O.
    Kurzina, I. A.
    [J]. VACUUM, 2023, 207
  • [6] Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition
    Afanasyev-Charkin, IV
    Jacobsohn, LG
    Averitt, RD
    Nastasi, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (06): : 2342 - 2346
  • [7] Carbon nitride thin films prepared by pulsed XeCl excimer laser deposition assisted by DC glow discharge
    Fu, G.S.
    Yu, W.
    Wang, S.F.
    Li, X.W.
    Zhang, L.S.
    Han, L.
    [J]. 2001, Science Press (50):
  • [8] Structural and optical characterization of fluorinated hydrogenated silicon carbide films deposited by pulsed glow discharge
    Jacobsohn, LG
    Franceschini, DF
    Afanasyev-Charkin, IV
    Cooke, DW
    Daemen, LL
    Averitt, RD
    Nastasi, M
    [J]. SURFACE & COATINGS TECHNOLOGY, 2006, 200 (20-21): : 6079 - 6082
  • [9] Carbon nitride, thin films prepared by pulsed XeCl excimer laser deposition assisted by DC glow discharge
    Fu, GS
    Yu, W
    Wang, SF
    Li, XW
    Zhang, LS
    Han, L
    [J]. ACTA PHYSICA SINICA, 2001, 50 (11) : 2263 - 2268
  • [10] Argon gas concentration effects on nanostructured molybdenum nitride layer growth using 100 Hz pulsed dc glow discharge
    Ikhlaq, U.
    Ahmad, R.
    Saleem, S.
    Shah, M. S.
    Umm-i-Kalsoom
    Khan, N.
    Khalid, N.
    [J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 59 (02):
12345