Mixed-Dimensional InSe-Si Heterojunction Nanostructures for Self-Powered Broadband Photodetectors

被引:8
|
作者
Yang, Xuxuan [1 ]
Liu, Zhiying [1 ]
Gao, Feng [2 ]
Zhang, Shichao [2 ]
Shang, Huiming [2 ]
Hu, Yunxia [2 ]
Zhang, Yunxiao [3 ]
Fu, Zhendong [3 ]
Huang, Yuewu [4 ]
Feng, Wei [1 ]
Hu, Pingan [2 ]
机构
[1] Northeast Forestry Univ, Sch Chem Chem Engn & Resource Utilizat, Harbin 150040, Peoples R China
[2] Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct, Harbin 150080, Peoples R China
[3] Tianjin Jinhang Tech Phys Inst, Tianjin 300308, Peoples R China
[4] Harbin Univ Sci & Technol, Coll Sci, Harbin 150080, Peoples R China
基金
中国国家自然科学基金;
关键词
multilayer InSe; photodetector; self-powered; mixed-dimensional heterojunctions; van der Waals heterojunctions; RESPONSIVITY; DETECTIVITY;
D O I
10.1021/acsanm.1c03100
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-performance self-powered broadband photo-detectors composed of mixed-dimensional (2D-3D) InSe-Si van der Waals heterojunctions (vdWHs) are demonstrated for the first time. Because of the suitable band structures, high electron mobility, and good light absorption of the individual 2D InSe and 3D Si, the 2D-3D vdWHs exhibit an excellent rectifying effect, a broad photoresponse region, high responsivity, good stability, and good optical imaging capability. The electrical and photoresponse performance is superior to that of most other 2D InSe-based vdWHs. The good electrical and photoresponse performance of 2D-3D InSe-Si vdWHs demonstrates their broad applicability in high-performance optoelectronic devices.
引用
收藏
页码:12932 / 12936
页数:5
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