The growth of single crystals by the self-seeding technique

被引：26
|
作者：
Ivanov, YM [1 ]
机构：
[1] AV Shubnikov Crystallog Inst, Moscow 117333, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 194卷 / 3-4期
关键词：
self-seeding; composition control; single crystal; cadmium telluride; substrate;
D O I：
10.1016/S0022-0248(98)00620-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A self-seeding technique suitable for growing large single crystals of low-heat-conductivity materials from the melt is developed using industrially important CdTe and Cd1-xZnxTe crystals as an example. A method of controlling crystal composition by maintaining an "undersaturation" excessive partial pressure of a higher-volatility component over the melt, which was developed for preparing semiconductor materials, is applied to Cd-containing compounds for the first time. With these modifications, rather perfect large CdTe and Cd1-xZnxTe single crystals are grown by the Obreimov-Shubnikov (gradient freeze) method. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：309 / 316
页数：8
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