Optimization Schemes for In-Memory Linear Regression Circuit With Memristor Arrays

被引:8
|
作者
Wang, Shiqing [1 ,2 ]
Sun, Zhong [1 ,3 ]
Liu, Yuheng [3 ]
Bao, Shengyu [3 ]
Cai, Yimao [1 ,3 ]
Ielmini, Daniele [4 ]
Huang, Ru [1 ,3 ]
机构
[1] Peking Univ, Inst Artificial Intelligence, Beijing 100871, Peoples R China
[2] Nanjing Univ, Kuang Yaming Honors Sch, Nanjing 210023, Peoples R China
[3] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[4] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
基金
中国国家自然科学基金;
关键词
Memristors; Linear regression; Mathematical models; Eigenvalues and eigenfunctions; Optimization; Integrated circuit modeling; Computational modeling; Analog computing; in-memory computing; linear regression; machine learning; memristor; DESIGN;
D O I
10.1109/TCSI.2021.3122327
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, an in-memory analog circuit based on crosspoint memristor arrays was reported, which enables solving linear regression problems in one step and can be used to train many other machine learning algorithms. To explore its potential for computing accelerator applications, it is of fundamental importance to improve the computing speed of the circuit, i.e., the circuit response towards correct outputs. In this work, we comprehensively studied the transfer function of this circuit, resulting in a quadratic eigenvalue problem that describes the distribution of poles. The minimal real part of non-zero eigenvalues defines the dominant pole, which in turn dominates the response time. Simulations for multiple linear regression solutions with different datasets evidence that, the computing time does not necessarily increase with problem size. The dominant pole is related to parameters in the circuit, including feedback conductance, and gain bandwidth products of operational amplifiers. By optimizing these parameters synergistically, the dominant pole shifts to higher frequencies and the computing speed is consequently optimized. Our results provide a guideline for design and optimization of in-memory machine learning accelerators with analog memristor arrays. Also, issues including power consumption, impact of noise and variation of sources and memristors are investigated to offer a comprehensive evaluation of the circuit performance.
引用
收藏
页码:4900 / 4909
页数:10
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