240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

被引：29
|
作者：
Lahrichi, M. [1 ]
Glastre, G. [1 ]
Derouin, E. [1 ]
Carpentier, D. [1 ]
Lagay, N. [1 ]
Decobert, J. [1 ]
Achouche, M. [1 ]
机构：
[1] Alcatel Lucent Bell Labs France, Alcatel Thales Lab 3 5, F-91400 Marcoussis, France
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 18期
关键词：
AlInAs; avalanche photodiode (APD); dark current; excess noise factor; GaInAs; gain-bandwidth product; NOISE; JUNCTION; DIODES;
D O I：
10.1109/LPT.2010.2057503
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M = 10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.
引用
收藏
页码：1373 / 1375
页数：3
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